Chapter 5 Bipolar Transistors
1. Higher current and high voltage capability → Power application 2. Faster switching times (fastest transistors ever reported f t > 800 GHz) Basic Structure
Some facets about bipolar devices 1. The base region is non-uniformly doped, this results in a built- in ε field across the base which aids the transport of e- from emitter to collector. 2. Parasitic exist in the structure RB : base resistance from base contact to active base area RC : collector resistance (predominately through N - layer) 3. The N - collector adjacent to the base reduces CBC, improves BVCB
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